Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Reexamination Certificate
2004-12-17
2008-10-21
Nadav, Ori (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
C257S072000, C257S347000, C257S350000
Reexamination Certificate
active
07439543
ABSTRACT:
There is provided a thin film transistor having improved reliability. A gate electrode includes a first gate electrode having a taper portion and a second gate electrode with a width narrower than the first gate electrode. A semiconductor layer is doped with phosphorus of a low concentration through the first gate electrode. In the semiconductor layer, two kinds of n−-type impurity regions are formed between a channel formation region and n+-type impurity regions. Some of the n−-type impurity regions overlap with a gate electrode, and the other n−-type impurity regions do not overlap with the gate electrode. Since the two kinds of n−-type impurity regions are formed, an off current can be reduced, and deterioration of characteristics can be suppressed.
REFERENCES:
patent: 3933529 (1976-01-01), Goser
patent: 4394182 (1983-07-01), Maddox, III
patent: 4851363 (1989-07-01), Troxell et al.
patent: 4942441 (1990-07-01), Konishi et al.
patent: 4963504 (1990-10-01), Huang
patent: 5015599 (1991-05-01), Verhaar
patent: 5177571 (1993-01-01), Satoh et al.
patent: 5182619 (1993-01-01), Pfiester
patent: 5187602 (1993-02-01), Ikeda et al.
patent: 5217910 (1993-06-01), Shimizu et al.
patent: 5247190 (1993-09-01), Friend et al.
patent: 5254490 (1993-10-01), Kondo
patent: 5276347 (1994-01-01), Wei et al.
patent: 5281840 (1994-01-01), Sarma
patent: 5323042 (1994-06-01), Matsumoto
patent: 5358879 (1994-10-01), Brady et al.
patent: 5399502 (1995-03-01), Friend et al.
patent: 5401982 (1995-03-01), King et al.
patent: 5412240 (1995-05-01), Inoue et al.
patent: 5413945 (1995-05-01), Chien et al.
patent: 5482871 (1996-01-01), Pollack
patent: 5508209 (1996-04-01), Zhang et al.
patent: 5528397 (1996-06-01), Zavracky et al.
patent: 5532175 (1996-07-01), Racanelli et al.
patent: 5532176 (1996-07-01), Katada et al.
patent: 5543340 (1996-08-01), Lee
patent: 5543947 (1996-08-01), Mase et al.
patent: 5567966 (1996-10-01), Hwang
patent: 5581092 (1996-12-01), Takemura
patent: 5583369 (1996-12-01), Yamazaki et al.
patent: 5594569 (1997-01-01), Konuma et al.
patent: 5616506 (1997-04-01), Takemura
patent: 5623157 (1997-04-01), Miyazaki et al.
patent: 5643826 (1997-07-01), Ohtani et al.
patent: 5686328 (1997-11-01), Zhang et al.
patent: 5693959 (1997-12-01), Inoue et al.
patent: 5705424 (1998-01-01), Zavracky et al.
patent: 5719588 (1998-02-01), Johnson
patent: 5736750 (1998-04-01), Yamazaki et al.
patent: 5742363 (1998-04-01), Bae
patent: 5764206 (1998-06-01), Koyama et al.
patent: 5767930 (1998-06-01), Kobayashi et al.
patent: 5773330 (1998-06-01), Park
patent: 5830787 (1998-11-01), Kim
patent: 5841170 (1998-11-01), Adan et al.
patent: 5852481 (1998-12-01), Hwang
patent: 5858820 (1999-01-01), Jung et al.
patent: 5903249 (1999-05-01), Koyama et al.
patent: 5912492 (1999-06-01), Chang et al.
patent: 5923961 (1999-07-01), Shibuya et al.
patent: 5923962 (1999-07-01), Ohtani et al.
patent: 5949107 (1999-09-01), Zhang
patent: 5962872 (1999-10-01), Zhang et al.
patent: 5965919 (1999-10-01), Yoo
patent: 5981367 (1999-11-01), Gonzalez
patent: 6001714 (1999-12-01), Nakajima et al.
patent: 6008100 (1999-12-01), Yeh et al.
patent: 6008869 (1999-12-01), Oana
patent: 6030667 (2000-02-01), Nakagawa et al.
patent: 6049092 (2000-04-01), Konuma et al.
patent: 6081308 (2000-06-01), Jeong et al.
patent: 6087679 (2000-07-01), Yamazaki et al.
patent: 6114715 (2000-09-01), Hamada
patent: 6133074 (2000-10-01), Ishida et al.
patent: 6140667 (2000-10-01), Yamazaki
patent: 6160279 (2000-12-01), Zhang et al.
patent: 6165824 (2000-12-01), Takano et al.
patent: 6166396 (2000-12-01), Yamazaki
patent: 6166414 (2000-12-01), Miyazaki et al.
patent: 6180957 (2001-01-01), Miyasaka et al.
patent: 6198133 (2001-03-01), Yamazaki et al.
patent: 6222238 (2001-04-01), Chang et al.
patent: 6259120 (2001-07-01), Zhang et al.
patent: 6259138 (2001-07-01), Ohtani et al.
patent: 6259144 (2001-07-01), Gonzalez
patent: 6274887 (2001-08-01), Yamazaki et al.
patent: 6281552 (2001-08-01), Kawasaki et al.
patent: 6285042 (2001-09-01), Ohtani et al.
patent: 6307214 (2001-10-01), Ohtani et al.
patent: 6335290 (2002-01-01), Ishida
patent: 6335541 (2002-01-01), Ohtani et al.
patent: 6348368 (2002-02-01), Yamazaki et al.
patent: 6365933 (2002-04-01), Yamazaki
patent: 6469317 (2002-10-01), Yamazaki et al.
patent: 6479333 (2002-11-01), Takano et al.
patent: 6501098 (2002-12-01), Yamazaki
patent: 6507069 (2003-01-01), Zhang et al.
patent: 6515338 (2003-02-01), Inumiya et al.
patent: 6534789 (2003-03-01), Ishida
patent: 6541294 (2003-04-01), Yamazaki
patent: 6590230 (2003-07-01), Yamazaki et al.
patent: 6617644 (2003-09-01), Yamazaki et al.
patent: 6646287 (2003-11-01), Ono et al.
patent: 6664145 (2003-12-01), Yamazaki et al.
patent: 6773971 (2004-08-01), Zhang et al.
patent: 6867431 (2005-03-01), Konuma et al.
patent: 6891195 (2005-05-01), Yamazaki et al.
patent: 2002/0134983 (2002-09-01), Yamazaki
patent: 2002/0163049 (2002-11-01), Yamazaki et al.
patent: 2003/0054653 (2003-03-01), Yamazaki et al.
patent: 2003/0122132 (2003-07-01), Yamazaki
patent: 2003/0138985 (2003-07-01), Rhodes
patent: 2004/0051142 (2004-03-01), Yamazaki et al.
patent: 2006/0051906 (2006-03-01), Yamazaki
patent: 0 588 370 (1994-03-01), None
patent: 0 589 478 (1994-03-01), None
patent: 0 738 012 (1996-10-01), None
patent: 60-127761 (1985-07-01), None
patent: 03-250632 (1991-11-01), None
patent: 04-258160 (1992-09-01), None
patent: 04-369271 (1992-12-01), None
patent: 05-055477 (1993-03-01), None
patent: 05-102483 (1993-04-01), None
patent: 05-188401 (1993-07-01), None
patent: 06-148685 (1994-05-01), None
patent: 07-130652 (1995-05-01), None
patent: 07-202210 (1995-08-01), None
patent: 07-235680 (1995-09-01), None
patent: 08-078329 (1996-03-01), None
patent: 08-264784 (1996-10-01), None
patent: 08-274336 (1996-10-01), None
patent: 09-116167 (1997-05-01), None
patent: 09-191111 (1997-07-01), None
patent: 09-293600 (1997-11-01), None
patent: 10-065181 (1998-03-01), None
patent: 10-092576 (1998-04-01), None
patent: 10-104659 (1998-04-01), None
patent: 10-294280 (1998-04-01), None
patent: 10-135468 (1998-05-01), None
patent: 10-135469 (1998-05-01), None
patent: 10-233511 (1998-09-01), None
patent: 10-247735 (1998-09-01), None
patent: 10-294280 (1998-11-01), None
patent: 11-191628 (1999-07-01), None
patent: 11-345767 (1999-12-01), None
patent: 11-354442 (1999-12-01), None
patent: 2000-047263 (2000-02-01), None
patent: WO 90/13148 (1990-11-01), None
Hatano et al., “A Novel Self-Aligned Gate-Overlapped LDD Poly-Si TFT With High Reliability and Performance,” IEDM Technical Digest 97, pp. 523-526.
T. Yoshihara, Ekisho, “Time Division Full Color LCD by Ferroelectric Liquid Crystal,” vol. 3, No. 3, pp. 190-194, 1999.
Inui et al., “Thresholdless Antiferroelectricity in Liquid Crystals and its Application to Displays,” J. Mater. Chem., vol. 6, No. 4, pp. 671-673, 1996.
Terada et al., “Half- V Switching Mode FLCD,” Proceedings of the 46thApplied Physics Association Lectures, 28p- V-8, p. 1316, Mar. 1999.
Yoshida et al., “A Full-Color Thresholdless Antiferroelectric LCD Exhibiting Wide Viewing Angle with Fast Response Time,” SID 97 Digest, pp. 841-844, 1997.
Furue et al., “P-78 Characteristics and Driving Scheme of Polymer-Stabilized Monostable FLCD Exhibiting Fast Response Time and High Contrast Ratio with Gray-Scale Capability,” SID 98 Digest, pp. 782-785, 1998.
Specification and Drawings for U.S. Appl. No. 09/526,486, filed Mar. 15, 2000, “Semiconductor Device and Method of Manufacturing Thereof,” Hongyong Zhang et al.
Shimokawa et al., “Characterization of High-Efficiency Cast-Si Solar Cell Wafers by MBIC Measurement,” Japanese Journal of Applied Physics, vol. 27, No. 5, May 1998, pp. 751-758.
Hermann Schenk et al., “Polymers for Light Emitting Diodes,” EuroDisplay '99 Proceedings, pp. 33-37.
European Search Report, dated Nov. 21, 2000, for Application No. 99122785.1.
Nadav Ori
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device comprising thin film transistor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device comprising thin film transistor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device comprising thin film transistor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3992640