Semiconductor device comprising silicon semiconductor layer

Details Semiconductor device comprising silicon semiconductor layer Semiconductor device comprising silicon semiconductor layer

1997-10-22

1999-10-12

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 64, 257 66, 257255, H01L 2904

Patent

active

059659041

ABSTRACT:
The principle portion of a semiconductor device is made from a polycrystalline silicon semiconductor layer which yields an X ray diffraction pattern or an electron beam pattern with the (311) diffraction peak intensity accounting for 15% or more of the total diffraction peak intensity. A semiconductor device improved in performance and reliability can be obtained by reducing the density of states at the boundary between the polycrystalline silicon film and the gate insulating film.

REFERENCES:
patent: 4835059 (1989-05-01), Kodato
patent: 4905072 (1990-02-01), Komatsu et al.
patent: 5132754 (1992-07-01), Serikawa et al.

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