Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated...
Reexamination Certificate
2008-07-29
2008-07-29
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
C257S522000, C257SE23002, C257SE23011
Reexamination Certificate
active
11652297
ABSTRACT:
The present invention provides a zeolite sol which can be formed into a porous film that can be thinned to an intended thickness by a method used in the ordinary semiconductor process, that excels in dielectric properties, adhesion, film consistency and mechanical strength, and that can be easily thinned; a composition for film formation; a porous film and a method for forming the same; and a high-performing and highly reliable semiconductor device which contains this porous film inside. More specifically, the zeolite sol is prepared by hydrolyzing and decomposing a silane compound expressed by a general formula: Si(OR1)4(wherein R1represents a straight-chain or branched alkyl group having 1 to 4 carbons, and when there is more than one R1, the R1s can be independent and the same as or different from each other) in a conventional coating solution for forming a porous film in the presence of a structure-directing agent and a basic catalyst; and then by heating the silane compound at a temperature of 75° C. or lower. A composition for forming a porous film which contains this zeolite sol is used.
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Nakagawa Hideo
Ogihara Tsutomu
Sasago Masaru
Yagihashi Fujio
Matsushita Electric - Industrial Co., Ltd.
Myers Bigel & Sibley & Sajovec
Pert Evan
Shin-Etsu Chemical Co. , Ltd.
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