Semiconductor device comprising polycrystalline silicon resistor

Details Semiconductor device comprising polycrystalline silicon resistor Semiconductor device comprising polycrystalline silicon resistor

1984-05-15

1987-07-28

Chaudhuri, Olik

Metal working

Method of mechanical manufacture

Assembling or joining

29591, 148DIG136, 357 59, H01L 21441, H01L 2904

Patent

active

046824022

ABSTRACT:
This invention relates to a semiconductor device having a resistor element of polycrystalline silicon and method of manufacturing the device. The resistor element comprises a first conductive layer made of a first polycrystalline silicon layer and island-like second conductive members made of a second polycrystalline silicon layer and provided on end sections of the first conductive layer respectively. The resistance value of the resistor element is determined by a center section between the end sections of the first conductive layer. Therefore, high resistance value can be obtained by decreasing the thickness of the first conductive layer, or the center section thereof without sacrificing the degree of integration. On the other hand, the contact portions with wiring layers become a large thickness because they are composed of the end sections of the first conductive layer and the island-like second conductive member. Therefore, a good and reliable contact structure can be obtained in the resistor element having high resistance value.

REFERENCES:
patent: 3364085 (1968-01-01), Dahlberg
patent: 4270262 (1981-06-01), Hori et al.
patent: 4278989 (1981-07-01), Baba et al.
patent: 4317274 (1982-03-01), Yasunari
patent: 4380773 (1983-04-01), Goodman
patent: 4441249 (1984-04-01), Alspector et al.
patent: 4477962 (1984-10-01), Godejahn

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