Semiconductor device comprising passive components

Details Semiconductor device comprising passive components Semiconductor device comprising passive components

2011-03-01

2011-03-01

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

C257S533000, C257SE29343

Reexamination Certificate

active

07898059

ABSTRACT:
A method of making a semiconductor device includes the steps of: providing a semiconductor substrate (110, 510, 1010, 1610) having a patterned interconnect layer (120, 520, 1020, 1620) formed thereon; depositing a first dielectric material (130, 530, 1030, 1630) over the interconnect layer; depositing a first electrode material (140, 540, 1040, 1640) over the first dielectric material; depositing a second dielectric material (150, 550, 1050, 1650) over the first electrode material; depositing a second electrode material (160, 560, 1060, 1660) over the second dielectric material; patterning the second electrode material to form a top electrode (211, 611, 1111, 1611) of a first capacitor (210, 710, 1310, 1615); and patterning the first electrode material to form a top electrode (221, 721, 1221, 1621) of a second capacitor (220, 720, 1320, 1625), to form an electrode (212, 712, 1212, 1612) of the first capacitor, and to define a resistor (230, 730, 1330).

REFERENCES:
patent: 6436756 (2002-08-01), Nishimura et al.
patent: 6838717 (2005-01-01), Yen et al.
patent: 2001/0023098 (2001-09-01), Tsugane et al.
patent: 2003/0127705 (2003-07-01), Kwak et al.
patent: 1248287 (2006-06-01), None
patent: 99/0036651 (1999-12-01), None
PCT Application No. PCT/US2005/004008, Supplementary Search Report dated May 19, 2010.

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