Semiconductor device comprising p-type ZnMgSSe layer

Details Semiconductor device comprising p-type ZnMgSSe layer Semiconductor device comprising p-type ZnMgSSe layer

1998-02-27

2000-07-11

Healy, Brian

Coherent light generators

Particular active media

Semiconductor

372 43, 372 44, 372 46, 372 50, H01S 318

Patent

active

060883758

ABSTRACT:
A II-VI semiconductor device has a p-doped quaternary ZnMgSSe layer formed of undoped sublayers and p-doped sublayers.

REFERENCES:
patent: 5363395 (1994-11-01), Gaines et al.
patent: 5515393 (1996-05-01), Okuyama et al.
patent: 5619520 (1997-04-01), Sasai et al.
patent: 5665977 (1997-09-01), Ishibashi et al.
patent: 5742629 (1998-04-01), Nishikawa et al.

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