Semiconductor device comprising MIS transistor with high concent

Details Semiconductor device comprising MIS transistor with high concent Semiconductor device comprising MIS transistor with high concent

1999-01-07

2000-06-27

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257287, 257219, 257220, 257221, 257339, 257377, 257611, 257657, 257917, 257344, 257345, 438289, 438290, 438291, H01L 2976, H01L 2980, H01L 27148

Patent

active

060810076

ABSTRACT:
A gate insulating film and gate electrodes are formed on a substrate containing N-type impurities such as P or As. Under the gate insulating film is a gate region on both sides of which are a first and a second source drain region. The gate region is furnished in its central part with a high-concentration channel injection region containing N-type impurities at a concentration higher than that of the substrate. Between the high-concentration channel injection region on the one hand and the first and the second source drain region and on the other hand, there are formed a first and a second low-concentration channel injection region and having substantially the same impurity concentration as that of the substrate.

REFERENCES:
patent: 4514893 (1985-05-01), Kinsbron et al.
patent: 4949136 (1990-08-01), Jain
patent: 5183771 (1993-02-01), Mitsui et al.
patent: 5359221 (1994-10-01), Miyamoto et al.
patent: 5466957 (1995-11-01), Yuki et al.
patent: 5548148 (1996-08-01), Bindal
patent: 5895954 (1999-04-01), Yasumura et al.

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