Semiconductor device comprising Cu--Ta and method for forming th

Details Semiconductor device comprising Cu--Ta and method for forming th Semiconductor device comprising Cu--Ta and method for forming th

1998-01-20

2000-08-29

Everhart, Caridad

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257748, 257761, 438685, 438687, H01L 2348

Patent

active

061113182

ABSTRACT:
A wiring layer 17' of a semiconductor device is formed, at first, by forming a Cu--Ta film 15 by adding 0.5 weight % of Ta in Cu on a barrier metal layer, and then, by forming a cap metal layer on the film 15. The wiring layer 17' is then etched with a high temperature RIE method. After this, the wiring layer 17' is heat-treated at about 450 .degree. C. for about 120 minutes in a hydrogen reduction atmosphere. With this heat treatment, Ta is precipitated at the grain boundaries of Cu of the Cu--Ta layer 15. Since Ta does not tend to be alloyed with Cu easily and has low solid solubility in Cu crystal, Ta is precipitated at the grain boundaries of Cu by the above heat treatment. When Ta is precipitated at the grain boundaries of Cu such way, grain boundary diffusion is suppressed to generate less voids, so that the resistance to EM is improved.

REFERENCES:
patent: 3883947 (1975-05-01), Kruger et al.
patent: 4517033 (1985-05-01), Okumura et al.

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