Semiconductor device comprising bonding pad of barrier metal, si

Details Semiconductor device comprising bonding pad of barrier metal, si Semiconductor device comprising bonding pad of barrier metal, si

1997-01-13

1999-07-13

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

257751, 257753, 257764, 438649, H01L 2348, H01L 21441

Patent

active

059230878

ABSTRACT:
To provide a semiconductor device and a method of making a semiconductor device capable of preventing exfoliation at a pad electrode portion, a barrier metal layer 14, a silicon layer 15 and an aluminum layer 16 are formed on a side of a main face of a silicon substrate 11 (step A), the barrier metal layer 14, the silicon layer 15 and the aluminum layer 16 are patterned into a shape of a pad electrode (step B) and a silicide layer 17 is formed by an annealing treatment successive to the patterning step (step C).

REFERENCES:
patent: 4332839 (1982-06-01), Levinstein et al.
patent: 4507852 (1985-04-01), Karulker
patent: 4916397 (1990-04-01), Masuda et al.
patent: 4962414 (1990-10-01), Liou et al.
patent: 5552341 (1996-09-01), Lee
patent: 5554564 (1996-09-01), Nishioka et al.
patent: 5554866 (1996-09-01), Nishioka et al.
patent: 5703403 (1997-12-01), Sobue et al.
patent: 5811851 (1998-08-01), Nishioka et al.

Affiliated with

Also associated with

Rating

Semiconductor device comprising bonding pad of barrier metal, si does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device comprising bonding pad of barrier metal, si, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device comprising bonding pad of barrier metal, si will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2278210