Semiconductor device comprising an over-temperature detection el

Details Semiconductor device comprising an over-temperature detection el Semiconductor device comprising an over-temperature detection el

1995-02-17

1995-10-24

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257467, 257552, 257567, 257577, H01L 2972, H01L 2704

Patent

active

054612527

ABSTRACT:
A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second base region and a second emitter region. The output transistor is provided at a center of the collector region of the semiconductor substrate. A vacant region is formed on a center of the output transistor, and the temperature detection transistor is provided in the vacant region.

REFERENCES:
patent: 3614480 (1971-10-01), Berglund
patent: 4639755 (1987-01-01), Namiks et al.
patent: 4730228 (1988-03-01), Einzinger et al.
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 5070322 (1991-12-01), Fujihira
patent: 5237481 (1993-08-01), Soo et al.

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