Semiconductor device comprising an over-temperature detection el

Details Semiconductor device comprising an over-temperature detection el Semiconductor device comprising an over-temperature detection el

1995-07-18

1997-05-13

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

257467, 257552, 257567, 257577, H01L 2947, H01L 29812, H01L 27095

Patent

active

056295510

ABSTRACT:
A semiconductor device includes on a semiconductor substrate an output transistor which is composed of a collector region, a first base region and a first emitter region, and a temperature detection transistor composed of the collector region, a second base region and a second emitter region. The output transistor is provided at a center of the collector region of the semiconductor substrate. A vacant region is formed on a center of the output transistor, and the temperature detection transistor is provided in the vacant region.

REFERENCES:
patent: 4730228 (1988-03-01), Einzinger et al.
patent: 4760434 (1988-07-01), Tsuzuki et al.
patent: 4896199 (1990-01-01), Tsuzuki et al.
patent: 5461252 (1995-10-01), Nakura et al.

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