Semiconductor device comprising an MOS capacitance

Details Semiconductor device comprising an MOS capacitance Semiconductor device comprising an MOS capacitance

1998-05-27

1999-09-21

Chaudhuri, Olik

Semiconductor device manufacturing: process

Making passive device

Planar capacitor

438251, 438519, 438942, 257306, 257532, 257917, H01L 21265, H01L 27108, H01L 2900

Patent

active

059565934

ABSTRACT:
An improved semiconductor device including an MOS capacitance is provided, having enhanced MOS capacitance accuracy. A well of a first conductivity type is formed at the main surface of a semiconductor substrate. The above-described well is removed immediately under a capacitance dope layer.

REFERENCES:
patent: 4760034 (1988-07-01), Barden
patent: 4826779 (1989-05-01), Wright et al.
patent: 5416354 (1995-05-01), Blackstone
patent: 5548150 (1996-08-01), Omura et al.
patent: 5576570 (1996-11-01), Ohsawa et al.
patent: 5805410 (1998-09-01), Lee

Affiliated with

Also associated with

Rating

Semiconductor device comprising an MOS capacitance does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device comprising an MOS capacitance, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device comprising an MOS capacitance will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-90879