Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2005-07-12
2005-07-12
Fahmy, Wael (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S635000, C257S650000, C257S774000
Reexamination Certificate
active
06917110
ABSTRACT:
A semiconductor device capable of inhibiting a conductive plug from increase of resistance or disconnection resulting from moisture discharged from a first insulator film while reducing the capacitance between adjacent first interconnection layers is obtained. This semiconductor device comprises a plurality of first interconnection layers formed on a semiconductor substrate at a prescribed interval, a first insulator film, formed to fill up the clearance between the plurality of first interconnection layers, having an opening reaching the first interconnection layers and a conductive plug charged in the opening of the first insulator film and formed to be in contact with the first interconnection layers. An impurity is selectively introduced into a first region of the first insulator film in the vicinity of contact surfaces between the first interconnection layers and the conductive plug, thereby selectively modifying the first region of the first insulator film.
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Goto Takashi
Matsubara Naoteru
Mizuhara Hideki
Fahmy Wael
McDermott Will & Emery LLP
Pizzaro-Crespo Marcos D.
Sanyo Electric Co,. Ltd.
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