Semiconductor device comprising an integrated optical guide, whi

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357 30, 357 19, 357 55, 350 96120, 350 9611, H01L 29161

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active

049996860

ABSTRACT:
A semiconductor device comprising an integrated optical guide, which has at least one rectilinear part and one curved part, and comprising means for obtaining the confinement of the light in the guide in the curved part, which means include a groove provided along the edge of the guide in the region of the curve part, characterized in that these means also include a guide structure comprising a guiding layer and, overhanging the guiding layer, a ribbon in relief for determining the optical path followed by the light in the guiding layer, and in that these means moreover include a groove structure such that it has a constant depth, that its central part follows extactly the edge of the guiding ribbon in the curved part, that its ends are removing from the edge of this ribbon at the beginning and at the end of the curved part, that its bottom is disposed in the guiding layer at a level which does not reach the lower part of this guiding layer.

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Liou et al., "Monolithic Integrated InGaAsP/InP Distributed Feedback Laser Y-Branching Waveguide and a Monitoring Photodetector Grown by Metalorganic Chemical Vapor Deposition," Appl. Phys. Lett. 54(2), 9 Jan. 1989, pp. 114-116.
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P. C. Kendall et al., "Rib Waveguide Curvature Loss: The Scalar Problem", IEEE Proceedings, vol. 132, Pt. J., No. 2 (Apr. 1985), pp. 140-145.
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