Semiconductor device comprising an insulated gate field effect t

Details Semiconductor device comprising an insulated gate field effect t Semiconductor device comprising an insulated gate field effect t

1978-05-23

1980-04-08

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, B01J 1700

Patent

active

RE0302511

ABSTRACT:
Method of making an insulated gate field effect transistor is described in which the surface of a silicon semiconductor is covered in whole or in part with a layer of a masking material which masks against oxidation, such as silicon nitride. Areas of the silicon surface are exposed for the source and drain regions, leaving the oxidation mask over the future channel. When the source and drain regions have been made, as for example by diffusion, the device is subjected to oxidation, causing the growth of a thick oxide which sinks into the silicon surface where it is not masked by the oxidation mask. Among the advantages obtained are fewer precise masking steps, a flatter device surface, and reduced gate overlap of the source and drain.

REFERENCES:
patent: 3247428 (1966-04-01), Perri
patent: 3442011 (1969-05-01), Strieter
patent: 3445924 (1969-05-01), Cheroff
patent: 3472712 (1969-10-01), Bower
patent: 3475234 (1969-10-01), Kerwin
patent: 4058887 (1977-11-01), Dewitt

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