Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2002-06-27
2008-08-12
Weiss, Howard (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S758000, C257SE21273, C257SE23112, C438S778000
Reexamination Certificate
active
07411275
ABSTRACT:
It is an object to provide an insulating film having a very low dielectric constant and a great mechanical strength. Moreover, it is another object to provide a semiconductor device capable of reducing both a capacity between wiring layers and a capacity between wirings also in microfabrication and an increase in integration in the semiconductor device. In order to attain the objects, there is provided an inorganic insulating film comprising a porous structure having a skeletal structure in which a vacancy is arranged periodically and a large number of small holes are included.
REFERENCES:
patent: 5494858 (1996-02-01), Gnade et al.
patent: 5858457 (1999-01-01), Brinker et al.
patent: 6365266 (2002-04-01), MacDougall et al.
patent: 6399177 (2002-06-01), Fonash et al.
patent: 2000-183056 (2000-06-01), None
patent: 2001-332543 (2001-11-01), None
Hiroki Arao, “Tokushu Shinzairyo-Shin-Process ni yoru Handotai Hakumaku Keisei Gijutsu—Kakusha no Low-k Zairyo no Kosei to Tokucho” IPS Shokubai Kagaku Kogyo, Denshi Zairyo, May 2001, vol. 40, No. 5, pp. 98-100.
Hiroyuki Yamakawa, et al. “300/mm/130nm Taio no Handotai Seizo Sochi Low-k Integration”, Denshi Zairyo, Mar. 2001, vol. 40, No. 3, pp. 53-61.
Kazuhiko Omote, et al. “X-Sen ni yoru Tokoshitsu Low-k Maku no Kuko Sokutei, Tokushu Shinzairyo-Shin-Process ni yoru Handotai Hakumaku Keisei Gijutsu X-Sen ni yoru Takoshitsu Low-k Maku no Kuko Skotei”, Denshi Zairyo, May 2001, vol. 40, No. 5, pp. 56-60; Fig. 1.
Chiaki Tanaka et al. “Shingata Low-k Zairyo (ISM-1.5) no Kaihatsu”, ULVAC Technical Journal, No. 54, Mar. 23, 2001, pp. 1-3.
Yin, et al., “Plasmon energy shift in mesoporous and double length-scale ordered nanoporous silica”, Applied Physics Letters, vol. 74, No. 18, May 3, 1999, pp. 2629-2631.
Lu, et al., “Continuous formation of supported cubic and hexagonal mesoporous films by sol-gel dip-coating”, Nature, vol. 389, Sep. 25, 1997, pp. 364-368.
Sellinger, et al., “Continuous self-assembly of organic-inorganic nanocomposite coatings that mimic nacre”, Nature, vol. 394, Jul. 16, 1998, pp. 257-260.
Hamre Schumann Mueller & Larson P.C.
Ingham John C
Rohm & Co., Ltd.
Weiss Howard
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