Semiconductor device comprising a silicide layer, and method of

Details Semiconductor device comprising a silicide layer, and method of Semiconductor device comprising a silicide layer, and method of

1991-04-11

1992-06-16

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 24, 148DIG3, H01L 2144

Patent

active

051224798

ABSTRACT:
Disclosed is a method of making a Si-based semiconductor device comprising a contact region that comprises a thin (exemplarily less than 50 nm), substantially uniform silicide layer. The silicide preferably is CoSi.sub.2 or TiSi.sub.2. The method comprises implantation of the appropriate metal ions into a Si body, the dose and the body temperature selected such that substantially complete amorphization of the implant volume results. Subsequently, the Si body is subjected to an annealing treatment that results in recrystallization of the implant volume and formation of the silicide layer. The layer extends to the surface of the body and contains essentially all of the implanted metal ions. The invention can advantageously be used in conjunction with extremely shallow junctions, such as will be of interest in short (e.g., <0.5 .mu.m) channel CMOS devices.

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