Semiconductor device comprising a non-volatile storage transisto

Details Semiconductor device comprising a non-volatile storage transisto Semiconductor device comprising a non-volatile storage transisto

1986-11-25

1987-11-24

James, Andrew J.

Static information storage and retrieval

Magnetic bubbles

Guide structure

357 41, 357 49, 357 231, 365185, H01L 2994, H01L 2978, H01L 2176

Patent

active

047092556

ABSTRACT:
A non-volatile storage cell has a floating conductive layer which is coupled to an injector region which is located in the semiconductor body and, viewed on the surface, is connected by a semiconductor zone entirely enclosed by a thick insulating layer to an electrode region of the storage transistor. The injector region is doped more weakly than the semiconductor zone and at least a part of the edge of the semiconductor zone follows in a self-registered manner an edge of the thick insulating layer. Furthermore, the floating conductive layer is located for at least half its size on the thick insulating layer.

REFERENCES:
patent: 4019197 (1977-04-01), Lohstroh et al.
patent: 4477825 (1984-10-01), Yaron et al.
patent: 4517732 (1985-05-01), Oshikawa
patent: 4532535 (1985-07-01), Gerber et al.
patent: 4590504 (1986-05-01), Guterman

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