Patent
1984-06-29
1987-03-24
Sikes, William L.
357 60, 350 9611, G02B 610, H01L 2904
Patent
active
046520775
ABSTRACT:
A semiconductor device comprises a wave guide which permits propagation of light in the range of wavelengths between 0.9 and 1.6 .mu.m. This wave guide is formed on a crystallographic oriented substrate of monocrystalline semiconductor material from the group III-V covered with a layer of a dielectric material. Grooves are etched in the dielectric material according to the configuration chosen for the wave guide, and correspondingly into the substrate. The wave guide is obtained by anisotropic epitaxial growth of the III-V semiconductor material from the substrate in these grooves, and is bounded on its lateral and upper parts by crystallographic faces having a specific orientation relative to the plane of the substrate surface. The attenuation obtained for such wave guides is of the order of 1 dB/cm for light having a wavelength of 1.06 .mu.m.
REFERENCES:
patent: 3746908 (1973-07-01), Engeler
patent: 3887404 (1975-06-01), Chane 357 60
Chane et al., Journal of Crystal Growth, vol. 13, No. 14, 1972, "Etude de l'Epitaxie Localisee du GaAs", pp. 325-330.
Leonberger et al., Conference: Integrated and Guided-Wave Optics Technical Digest, Incline Village, N.Y., USA, 28-30, Jan. 1980, "Oxide-Confined GaAs Optical Waveguides Formed by Lateral Epitaxial Growth", WB1-1 to WB1-4.
MacFadyen et al., Electronics Letters, vol. 16, No. 11, 22 May 1980, "Waisted-Rib Optical Waveguides in GaAs", pp. 440-441.
Erman Marko
Theeten Jean-Bernard
Vodjdani Nakita
Gonzalez Frank
Miller Paul R.
Sikes William L.
U.S. Philips Corporation
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