Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – With emitter region having specified doping concentration...
Patent
1994-04-06
1995-10-03
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
With emitter region having specified doping concentration...
257590, 257593, H01L 2972
Patent
active
054554500
ABSTRACT:
A bipolar lateral transistor, for example of the pnp type, is contained in a semiconductor device. The lateral transistor has a p-type emitter region and a p-type collector region laterally spaced apart by an n-type base region. This lateral transistor is formed in an n-type epitaxial layer at the surface of a p-type substrate. The transistor further has a n.sup.++ -type buried layer. The current gain in this lateral transistor is strongly increased by forming the emitter from a first partial emitter region which is weakly p-type doped and extends below an insulating layer, and a second partial emitter region which is strongly P.sup.++ -type doped and extends below the contact zone of the emitter, which is defined by an opening in the insulating layer. The respective thicknesses and doping levels of the first and second emitter regions are provided such that the first region is transparent to electrons and the second region forms a screen against electrons. In addition, the ratio of the surface areas of the two partial regions is higher than 2, and the area of the second region is chosen to be small. The various regions of the transistor are formed by very thin layers. Alternatively, the transistor may be of the npn type.
REFERENCES:
patent: 4007474 (1977-02-01), Yagi et al.
patent: 4951108 (1990-08-01), Leduc
"The Physics and Modeling of Heavily Doped Emitters" Jesus A. Del Alamo et al (IEEE Transactions on Electron Devices, vol. ED-31, No. 12, Dec. 1984, pp. 1878-1888).
Biren Steven R.
Crane Sara W.
Kelley Nathan Kip
U.S. Philips Corporation
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