Semiconductor device comprising a highspeed static induction tra

Details Semiconductor device comprising a highspeed static induction tra Semiconductor device comprising a highspeed static induction tra

1995-03-23

1996-07-02

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Physical configuration of semiconductor

With specified crystal plane or axis

257263, 257264, 257268, 257628, H01L 2904, H01L 2980, H01L 31112, H01L 31036

Patent

active

055325114

ABSTRACT:
A semiconductor device includes a substrate crystal of a type for epitaxial growth thereon. The substrate crystal has a (111)A face and a (111)B face. Also provided are at least two semiconductor regions of different conductivity types deposited by way of epitaxial growth on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition, thereby providing a structure having a source and a drain. A gate side includes the (111)B face of the substrate crystal. A gate insulating layer is deposited by way of epitaxial growth on the gate side according to molecular layer epitaxy. Alternatively, the at least two semiconductor regions may be deposited on the (111)B face of the substrate crystal according to molecular layer epitaxy, and the gate insulating layer may be deposited on the (111)A face of the substrate crystal according to metal organic chemical vapor deposition.

REFERENCES:
patent: 3146137 (1964-08-01), Williams et al.
patent: 5117268 (1992-05-01), Nishizawa et al.
J. Nishizawa, H. Abe, and T. Kurabayashi, Molecular Layer Epitaxy, Electrochem. Soc., No. 132 (1985), pp. 1197-1200.

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