Semiconductor device comprising a control circuit and a power st

Details Semiconductor device comprising a control circuit and a power st Semiconductor device comprising a control circuit and a power st

1990-06-14

1992-06-02

Hille, Rolf

357 41, 357 44, 357 47, 357 234, 357 22, H01C 2702, H01C 2910, H01C 2980, H01L 2980

Patent

active

051191610

ABSTRACT:
The problems normally linked to the creation of a power stage using BJT transistors are overcome realizing the power stage with BMFET transistors.

REFERENCES:
patent: 4783423 (1988-11-01), Yamauchi
"The Turnoff Transient of the Bipolar-Mode Field-Effect Transistor", Vitale et al., IEEE Transactions on Electron Devices, Oct. 1988, New York, pp. 1676-1682.
"Isolation Techniques in Power IC's with Vertical Current Flow"; R. Zambrano et al., Sep. 14, 1987; SGS Microelectrica S.P.A., pp. 653-656.

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