Patent
1988-06-07
1990-01-30
Mintel, William
357 59, 357 54, 357 13, 357 40, H01L 2702
Patent
active
048977071
ABSTRACT:
A semiconductor device comprising a buried phosphor glass layer (5) consisting of a subjacent thick electrically insulating layer (4), a phosphor glass layer (6) and an overlying thin covering layer (7). According to the invention, the thicker electrically insulating layer (4) is locally removed and the combination of phosphor glass layer 6 and covering layer 7 is used as a dielectric for a capacitor. The invention also relates to a method of manufacturing a capacitor with indicated dielectric.
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Dunse et al., "Producing Stabilizing Layers by Converting Si.sub.3 N.sub.4 Into Phosphosilicate Glass During the Manufacture of MOS Devices," IBM Technical Disclosure Bulletin, vol. 18, No. 7, Dec. 1975, p. 2189.
Schlacter et al., "Advantages or Vapor-Plated Phosphosilicate Films in Large-Scale Integrated Circuit Arrays," IEEE Transactions on Electron Devices, vol. ED-17, No. 12, Dec. 1970, pp. 1077-1083.
Josquin Wilhelmus J. M. J.
Lindeman Henderikus
Miller Paul R.
Mintel William
U.S. Philips Corporation
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