Semiconductor device comprising a bipolar transistor

Details Semiconductor device comprising a bipolar transistor Semiconductor device comprising a bipolar transistor

1997-01-23

1998-09-22

Whitehead, Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Bipolar transistor structure

257357, 257360, 257402, 257900, H01L 27082

Patent

active

058118713

ABSTRACT:
An bipolar transistor of BiCMOS is provided to improve the breakdown voltage between a collector and a base. A low concentration diffusion layer is provided at a main surface of a semiconductor substrate at a boundary between an outer perimeter of an external base layer and an end portion of a field oxide film. The low concentration diffusion layer expands from the main surface of the semiconductor substrate toward the inside of the substrate and has a concentration lower than the impurity concentration of the external base layer.

REFERENCES:
patent: 5534723 (1996-07-01), Iwai et al.
patent: 5741083 (1995-11-01), Ikeda et al.

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