Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2007-04-24
2007-04-24
Dickey, Thomas L. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257SE25013
Reexamination Certificate
active
10799743
ABSTRACT:
A semiconductor device includes a semiconductor device body section having a substrate and an electrode formed on the substrate. A through-hole is formed through the electrode and the substrate in a stacking direction of the electrode and the substrate, and a conductive member is inserted into the through-hole. An insulating material which faces at least the through-hole is formed on the electrode. The conductive member is formed over the insulating material from the through-hole and is connected with the electrode.
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Miyazawa, Ikuya et al. “Development of Die Level Stacked Packaging.” International Conference on Electronic Packaging Official Program 2003.
U.S. Appl. No. 10/799,621, filed Mar. 15, 2004, Masuda.
Dickey Thomas L.
Oliff & Berridg,e PLC
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