Semiconductor device channel termination

Details Semiconductor device channel termination Semiconductor device channel termination

2003-10-30

2008-09-16

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Including dielectric isolation means

C257S376000, C257S398000, C257SE29016, C257SE21388, C438S298000, C438S450000

Reexamination Certificate

active

07425752

ABSTRACT:
A semiconductor device has a channel termination region for using a trench (30) filled with field oxide (32) and a channel stopper ring (18) which extends from the first major surface (8) through p-well (6) along the outer edge (36) of the trench (30), under the trench and extends passed the inner edge (34) of the trench. This asymmetric channel stopper ring provides an effective termination to the channel (10) which can extend as far as the trench (30).

REFERENCES:
patent: 4523369 (1985-06-01), Nagakubo
patent: 4729006 (1988-03-01), Dally et al.
patent: 5130268 (1992-07-01), Liou et al.
patent: 5801082 (1998-09-01), Tseng
patent: 5904541 (1999-05-01), Rho et al.
patent: 6096612 (2000-08-01), Houston
patent: 6355540 (2002-03-01), Wu

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