Active solid-state devices (e.g. – transistors – solid-state diode – Bipolar transistor structure – Including additional component in same – non-isolated structure
Reexamination Certificate
2007-12-18
2007-12-18
Purvis, Sue A. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Bipolar transistor structure
Including additional component in same, non-isolated structure
C257S414000, C257SE21705
Reexamination Certificate
active
10497264
ABSTRACT:
The semiconductor device (11) of the invention comprises a circuit that is covered by a passivation structure. It is provided with a first security element (12) that comprises a local area of the passivation structure and which has a first impedance. Preferably, a plurality of security elements (12) is present, whose the impedances differ. The semiconductor device (11) further comprises measuring means (4) for measuring an actual value of the first impedance, and a memory (7) comprising a first memory element (7A) for storing the actual value as a first reference value in the first memory element (7A). The semiconductor device (11) of the invention can be initialized by a method wherein the actual value is stored as the first reference value. Its authenticity can be checked by comparison of the actual value again measured and the first reference value.
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De Jongh Petra Elisabeth
Peek Hermanus Leonardus
Roks Edwin
Wolters Robertus Adrianus Maria
Erdem Fazli
NXP B.V.
Purvis Sue A.
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