Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-01-04
2011-01-04
Soward, Ida M (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S700000, C257S737000, C257S738000, C257S758000, C257SE23019, C257SE23020, C257SE23021
Reexamination Certificate
active
07863750
ABSTRACT:
In this manufacturing method of a semiconductor device, after a sealing film is applied over an entire surface of a semiconductor wafer and hardened, a second groove for forming a side-section protective film is formed in the sealing film and on the top surface side of the semiconductor wafer. In other words, the sealing film is formed in a state where a groove that causes strength reduction has not been formed on the top surface side of the semiconductor wafer. Since the second groove is formed on the top surface side of the semiconductor wafer after the sealing film is formed, the semiconductor wafer is less likely to warp when the sealing film, made of liquid resin, is hardened.
REFERENCES:
patent: 6559540 (2003-05-01), Kawashima
patent: 6734568 (2004-05-01), Matsuo et al.
patent: 6770971 (2004-08-01), Kouno et al.
patent: 7075181 (2006-07-01), Wakabayashi et al.
patent: 7112883 (2006-09-01), Hasunuma
patent: 7259455 (2007-08-01), Seto
patent: 7285867 (2007-10-01), Matsuzaki et al.
patent: 2007/0164432 (2007-07-01), Wakisaka et al.
patent: 2008/0023836 (2008-01-01), Watanabe
patent: 2008/0217786 (2008-09-01), Kasaoka et al.
patent: 2009/0079072 (2009-03-01), Mizusawa et al.
patent: 2010/0117228 (2010-05-01), Yamamichi et al.
patent: 2010/0155941 (2010-06-01), Matsuki et al.
patent: 3455762 (2003-08-01), None
Fujii Nobumitsu
Koroku Taisuke
Kuwabara Osamu
Okada Osamu
Shiota Junji
Casio Computer Co. Ltd.
Holtz Holtz Goodman & Chick PC
Soward Ida M
LandOfFree
Semiconductor device capable of suppressing warping in a... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device capable of suppressing warping in a..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device capable of suppressing warping in a... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2707840