Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – With contact or metallization configuration to reduce...
Reexamination Certificate
2008-01-01
2008-01-01
Warren, Matthew E. (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
With contact or metallization configuration to reduce...
C257S758000, C257S773000, C257S774000, C257SE23015, C257SE23020
Reexamination Certificate
active
07315072
ABSTRACT:
An interlayer insulating film is formed on a semiconductor substrate. An intra-layer insulating film is formed on the interlayer film. A recess is formed through the intra-layer film. The recess has a pad-part and a wiring-part continuous with the pad-part. The pad-part is wider than the width of the wiring-part. Convex regions are left in the pad-part. The convex regions are disposed in such a manner that a recess area ratio in a near wiring area superposed upon an extended area of the wiring-part into the pad-part, within a first frame area having as an outer periphery an outer periphery of the pad-part and having a first width, becomes larger than a recess area ratio in a second frame area having as an outer periphery an inner periphery of the first frame area and having a second width. A conductive film is filled in the recess.
REFERENCES:
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patent: 6297563 (2001-10-01), Yamaha
patent: 6362528 (2002-03-01), Anand
patent: 6417575 (2002-07-01), Harada et al.
patent: 10-229085 (1998-08-01), None
patent: 11-150114 (1999-06-01), None
Fujitsu Limited
Kratz Quintos & Hanson, LLP
Warren Matthew E.
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