Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Field effect transistor
Patent
1998-02-12
2000-02-15
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Field effect transistor
325194, 325195, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
060256133
ABSTRACT:
In a method of manufacturing a semiconductor device, the InP substrate is subjected to a NH.sub.3 plasma processing by a plasma CVD apparatus into which NH.sub.3 gas is introduced. The InP oxide film is deoxided and removed therefrom and an InN (nitride) film is then formed thereon. S.sub.i H.sub.3 gas and NH.sub.3 gas are introduced into the plasma CVD apparatus to form a SiNx spacer layer on the InN (nitride) film. A source electrode and drain electrode are formed as ohmic electrodes. A Pt layer is stacked on the InP channel region by evaporation lift-off or ion beam sputter method to form a gate electrode. Thereafter, by a process similar to that of forming the SiNx/InN spacer layer, a SiNx/InN passivation film is formed on all over the InP substrate including the source electrode, the drain electrode, and the gate electrode. Accordingly, a semiconductor device protected by the passivation film is completed.
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Bito Yasunori
Iwata Naotaka
Mintel William
NEC Corporation
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