Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Patent
1996-03-25
1997-05-13
Fahmy, W.
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
257207, 257211, 257760, 257759, H01L 23544, H01L 2710
Patent
active
056295570
ABSTRACT:
In an IC chip having an interlevel insulation film constituted by a first level silicon oxide film, a spin-on-glass film, a second level silicon oxide film, the SOG film is partially removed in a buffer region of a closed loop shape inside of the chip periphery and surrounding the chip inner region. The second level silicon oxide film and a passivation insulation film are formed covering the SOG film and buffer region. Water contents are intercepted by the buffer region and will not reach the element region. It is therefore possible to prevent an inversion of the conductivity type at the surface of a well region in the element region or a corrosion of wiring layers, thereby improving the reliability of an IC device.
Abraham Fetsum
Fahmy W.
Yamaha Corporation
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