Semiconductor device capable of increasing reliability

Details Semiconductor device capable of increasing reliability Semiconductor device capable of increasing reliability

1995-05-15

1996-08-20

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Passive components in ics

257310, H01L 2978

Patent

active

055481574

ABSTRACT:
In a semiconductor device having a first insulator layer on a semiconductor substrate and accumulation electrode layers overlying the first insulator layer, second insulator layers overlie predetermined areas of the first insulator layer and side electrode surfaces of the accumulation electrode layers. Each of the second insulator layers has a primary dielectric constant. A dielectric layer overlies upper surfaces of the accumulation electrode layers and the second insulator layers and has a secondary dielectric constant which is higher than the primary dielectric constant. An opposed electrode layer overlies the dielectric layer.

REFERENCES:
patent: 5276343 (1994-01-01), Kumagai et al.
"A Stacked Capacitor with (Ba.sub.x Sr.sub.1-x)TiO.sub.3 for 256 M DRAM", by Kuniaki Koyama et al., VLSI Development IEDM Technical Digest 1991, pp. 823-826.

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