Semiconductor device capable of detecting a light position

Details Semiconductor device capable of detecting a light position Semiconductor device capable of detecting a light position

1995-02-08

1997-02-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Electromagnetic or particle radiation

257448, 257459, 257461, 257463, 257465, H01L 3100

Patent

active

056001738

ABSTRACT:
A semiconductor position sensitive detector has an epitaxial layer of a second conductivity type formed on a semiconductor substrate of a first conductivity type. A first diffusion layer of the first conductivity type is formed in said epitaxial layer so as to isolate a rectangular portion of this epitaxial layer from the rest. A second diffusion layer of the first conductivity type is further formed in said rectangular portion of the epitaxial layer, in order to increase the resistance value of the epitaxial layer. In addition, due to the formation of the second diffusion layer, two p-n junctions having photoelectric transfer ability are formed in this device. So, a semiconductor position sensitive detector having excellent photoelectric characteristics can be obtained.

REFERENCES:
patent: 4241958 (1980-12-01), Wade
patent: 5252851 (1993-10-01), Mita et al.

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