Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Passive components in ics
Reexamination Certificate
2008-03-26
2010-12-21
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Passive components in ics
C257S538000, C257S754000, C257SE27047
Reexamination Certificate
active
07855434
ABSTRACT:
A semiconductor device is provided wherein a foundation insulating film is formed over a semiconductor substrate, a metal resistance element is formed on the foundation insulating film, and contacts are formed at both ends of the metal resistance element in a longitudinal direction of the metal resistance element and connected to the metal resistance element. The foundation insulating film comprises a single upwardly concave curved surface constituting not less than about 40 percent of an upper surface of the metal resistance element between the contacts in the longitudinal direction thereof. The curved surface of the foundation insulating film causes the metal resistance element to comprise a single upwardly concave curved surface constituting not less than about 40 percent of upper and lower surfaces of the metal resistance element between the contacts in the longitudinal direction thereof.
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Cooper & Dunham LLP
Ngo Ngan
Ricoh & Company, Ltd.
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