Semiconductor device manufacturing: process – Making device or circuit emissive of nonelectrical signal – Mesa formation
Patent
1996-06-28
1998-12-29
Tsai, Jey
Semiconductor device manufacturing: process
Making device or circuit emissive of nonelectrical signal
Mesa formation
438487, 438956, 438965, 438978, H01L 2100
Patent
active
058540890
ABSTRACT:
A semiconductor structure including: a substrate having a step portion; a first semiconductor layer formed on a region of the substrate which is selectively irradiated by light at an angle with respect to the projecting portion by using the step portion as a mask; and a second semiconductor layer formed on a region of the substrate shaded by the step portion.
REFERENCES:
patent: 4935936 (1990-06-01), Nelson et al.
patent: 4956682 (1990-09-01), Ohnaka et al.
patent: 5202285 (1993-04-01), Sugano et al.
patent: 5291033 (1994-03-01), Morishima
patent: 5373173 (1994-12-01), Ohata et al.
Patent Abstracts of Japan, vol. 17, No. 687 (E-1478), Dec. 16, 1993, and JP-A-05 2354-8 (Sharp Corp.), Sep. 10, 1993.
Patent Abstracts of Japan, vol. 13, No. 51(E-712), Feb. 6, 1989, and JP-A-63 244625 (Fujitsu Ltd.), Oct. 12, 1988.
Patent Abstracts of Japan, vol. 10, No. 201 (E-419), Jul. 15, 1986, and JP-A-61 044485 (Matsushida Electric Ind. Co. Ltd.), Mar. 4, 1986.
Kukimoto, H., et al., "Selective area control of material properties in laser-assisted MOVPE of GaAs and A1GaAs" J. Crystal Growth (1986) 77:223-228. No Month.
Sharp Kabushiki Kaisha
Tsai Jey
LandOfFree
Semiconductor device by selectively controlling growth of an epi does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device by selectively controlling growth of an epi, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device by selectively controlling growth of an epi will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1423945