Semiconductor device based on a SCR

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Device protection

Reexamination Certificate

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C257S355000, C257SE29181

Reexamination Certificate

active

11395464

ABSTRACT:
The present invention provides a semiconductor structure device having a first and a second semiconductor devices with a silicon controlled rectifier (SCR) formed between the two devices with advantages to couple the devices to provide more design flexibility and enhanced triggering in order to improve the ESD performance of the device.

REFERENCES:
patent: 5844280 (1998-12-01), Kim
patent: 6268992 (2001-07-01), Lee et al.
patent: 2003/0035257 (2003-02-01), Chen
patent: 2004/0243949 (2004-12-01), Wang et al.
patent: 2005/0242400 (2005-11-01), Cheng et al.
patent: 2005/0269641 (2005-12-01), Lai et al.
patent: 2006/0050453 (2006-03-01), Duvvury et al.

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