Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With housing or contact structure
Patent
1998-10-21
2000-08-29
Smith, Matthew
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With housing or contact structure
257 13, 257 81, 257 97, 257 99, 257103, 257 82, 372 43, 372 70, 372 73, 372 75, 372106, 438510, 438481, 438519, 438514, 438 46, H01L 3300
Patent
active
061112771
ABSTRACT:
A semiconductor device such as a light emitting semiconductor device comprising a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively by way of the mask layer, with each of the mask layer and the selective growing layer being disposed by two or more layers alternately. The semiconductor device is manufactured by a step of laminating on a substrate a mask layer having opening areas and a selective growing layer comprising a semiconductor grown selectively way of a mask layer, each by two or more layers alternately and a subsequent step of laminating semiconductor layers thereon. Threading dislocations in the underlying layer are interrupted by the first mask layer and the second mask layer and do not propagate to the semiconductor layer. The density of the threading dislocations is lowered over the entire surface and the layer thickness can be reduced.
REFERENCES:
patent: 5768182 (1998-06-01), Hu et al.
patent: 5798537 (1998-08-01), Nitta
patent: 5861636 (1999-01-01), Dutta et al.
Keshavan Belur
Smith Matthew
Sony Corporation
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