Semiconductor device applied to a variable capacitance...

Details Semiconductor device applied to a variable capacitance... Semiconductor device applied to a variable capacitance...

2006-01-17

2006-01-17

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Voltage variable capacitance device

With specified dopant profile

C257S506000

Reexamination Certificate

active

06987309

ABSTRACT:
A first conductivity type well area is formed in a semiconductor substrate. A second conductivity type semiconductor layer is formed at a first area of a well area which is separated by element isolation areas. In a base portion of the well area, a first conductivity type low resistance area is provided.

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