Semiconductor device and the method of producing the same

Details Semiconductor device and the method of producing the same Semiconductor device and the method of producing the same

2006-01-12

2008-12-09

Parekh, Nitin (Department: 2811)

Semiconductor device manufacturing: process

Packaging or treatment of packaged semiconductor

Including adhesive bonding step

C438S127000, C438S460000, C438S622000, C438S613000, C257S737000, C257SE21599

Reexamination Certificate

active

07462511

ABSTRACT:
A SiP type semiconductor device and a method of producing the same is provided wherein curvature of a wafer is suppressed in the production steps, workability does not decline, and high throughput can be attained. An insulation layer is formed by stacking a plurality of resin layers on a semiconductor substrate, wiring layers are formed by being buried in the insulation layer so as to be connected to an electronic circuit, an insulating buffer layer is formed on the insulation layer, a conductive post is formed through the buffer layer and connected to the wiring layer, and a projecting electrode is formed projecting from a surface of the buffer layer and connected to the conductive post.

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Japanese Office Action, Oct. 24, 2006.
JP 2003-415516 Office Action Issued on Jan. 16, 2007; 2 pages.

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