Semiconductor device and temperature sensor structure for a...

Details Semiconductor device and temperature sensor structure for a... Semiconductor device and temperature sensor structure for a...

2008-03-28

2010-10-05

Tran, Tan N (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Responsive to non-electrical signal

Temperature

C257S470000, C257SE21001

Reexamination Certificate

active

07808067

ABSTRACT:
A temperature sensor structure for a semiconductor device. One embodiment provides a semiconductor substrate including the semiconductor device. A dissipation region of the semiconductor device is adjacent to a main surface of the semiconductor substrate. A first layer arrangement is disposed on the main surface of the semiconductor substrate adjacent to the dissipation region of the semiconductor device. A second layer arrangement is disposed on the first layer arrangement with an insulation layer for galvanic separation therebetween. The first and second layer arrangements and the insulation layer form a layer structure on the main surface above the dissipation region. A circuit element is disposed in the second layer arrangement, the circuit element having a temperature-dependent characteristic and being coupled thermally to the dissipation region.

REFERENCES:
patent: 5726481 (1998-03-01), Moody
patent: 5969927 (1999-10-01), Schirmer et al.
patent: 2001/0035578 (2001-11-01), Liang et al.
patent: 2002/0072219 (2002-06-01), Avanzino et al.
patent: 19644193 (1998-05-01), None
“Taschenbuch Digitaltechnik”, Christian Siemers, et al., Fachbuchverlag Leipzig.

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