Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2006-04-18
2006-04-18
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S686000, C257S401000, C257S288000, C257S341000, C257S350000, C438S108000, C438S109000, C361S091200, C361S091100, C361S091500, C361S718000, C361S760000
Reexamination Certificate
active
07030501
ABSTRACT:
A conventional one-chip dual MOSFET has a structure in which two chips are arranged side by side and drain electrodes are short-circuited. Therefore, the mounting area thereof is large, and the resistance between the drain electrodes cannot be reduced. Accordingly, there is a limit of reduction in size and thickness of a semiconductor device, which is demanded by the market. A dual MOSFET of the embodiment includes two semiconductor chips (MOSFET) superimposed on each other with drain electrodes thereof directly connected to each other. In the dual MOSFET, the drain electrodes do not need to be led to the outside, and only two gate terminals and two source terminals are used. Accordingly, these four terminals are led out by means of a lead frame or conductive patterns. This allows the device to be reduced in size and to have lower on-resistance.
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Fukuda Hirokazu
Sakai Haruhiko
Yoshiba Shigeharu
Chu Chris C.
Thomas Tom
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