Active solid-state devices (e.g. – transistors – solid-state diode – Housing or package – For plural devices
Reexamination Certificate
2007-03-27
2007-03-27
Potter, Roy (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Housing or package
For plural devices
C257S777000
Reexamination Certificate
active
11042347
ABSTRACT:
A semiconductor device includes a semiconductor element having a plurality of electrodes provided on one principal surface thereof and a wiring substrate having a conductive layer on an insulating substrate. The wiring substrate is arranged in a substantially U-shape along an outer edge of the semiconductor element. An end of the conductive layer of the wiring substrate is connected to the electrodes of the semiconductor element. The other end of the conductive layer extends in a direction opposite to the semiconductor element on the other principal surface side of the semiconductor element.
REFERENCES:
patent: 5347159 (1994-09-01), Khandros et al.
patent: 5801439 (1998-09-01), Fujisawa et al.
patent: 6329708 (2001-12-01), Komiyama
patent: 6376769 (2002-04-01), Chung
patent: 6876074 (2005-04-01), Kim
patent: 6998704 (2006-02-01), Yamazaki et al.
patent: 2001/0054762 (2001-12-01), Yamazaki et al.
patent: 2001-85592 (2001-03-01), None
patent: 2002-329835 (2002-11-01), None
patent: 2003-7899 (2003-01-01), None
Misawa Hiroshi
Ohno Takao
Yoshida Eiji
Potter Roy
Westerman, Hattori, Daniels & Adrian , LLP.
LandOfFree
Semiconductor device and stacked semiconductor device that... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and stacked semiconductor device that..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and stacked semiconductor device that... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3777107