Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Chip mounted on chip
Reexamination Certificate
2007-08-06
2010-10-12
Le, Thao X (Department: 2892)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Chip mounted on chip
C257S686000, C257S723000, C438S109000, C438S110000
Reexamination Certificate
active
07812457
ABSTRACT:
The semiconductor device1has a semiconductor chip10(first semiconductor chip) and a semiconductor chip20(second semiconductor chip). The semiconductor chip20is formed on the semiconductor chip10. The semiconductor chip20is constituted by comprising a semiconductor substrate22. The semiconductor substrate22, which is an SOI substrate, is constituted by comprising an insulating layer34, and a silicon layer36, which is provided on the insulating layer34, including a circuit forming region A1. The insulating layer34functions as a protective film (a first protective film) covering a lower face (a face opposite to the semiconductor chip10) of the circuit forming region A1. A protective film38(a second protective film) is provided on the semiconductor substrate22. The protective film38covers a side face of the circuit forming region A1.
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Le Thao X
NEC Electronics Corporation
Sughrue & Mion, PLLC
Tran Thanh Y
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