Semiconductor device and semiconductor wafer

Details Semiconductor device and semiconductor wafer Semiconductor device and semiconductor wafer

2007-02-20

2007-02-20

Cao, Phat X. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Alignment marks

C257S620000

Reexamination Certificate

active

11345288

ABSTRACT:
A semiconductor device comprises a semiconductor substrate having a first surface and a second surface, and a first multilayer laminated structure film which is formed in the first surface of the semiconductor substrate and has a first layer having a first refractive index, a second layer formed on the first layer and having a second refractive index lower than the first refractive index, and a third layer formed on the second layer and having a third refractive index higher than the second refractive index, and in which the thicknesses of the respective layers are respectively thicknesses calculated by (2N+1)λ/(4n) where the wavelength of light used for detecting the first multilayer laminated structure film is defined as λ, the refractive indices of the respective layers are defined as n, and N is defined as 0 or a natural number.

REFERENCES:
patent: 4230505 (1980-10-01), Wu et al.
patent: 5877094 (1999-03-01), Egley et al.
patent: 6975040 (2005-12-01), Dower et al.
patent: 05-198471 (1993-08-01), None
patent: 07-283383 (1995-10-01), None
patent: 2000-098583 (2000-04-01), None

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