Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2005-02-15
2005-02-15
Jones, Deborah (Department: 1775)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C428S620000, C428S308400, C428S318600, C428S319300, C428S319900, C428S500000, C428S521000, C524S575000, C524S423000
Reexamination Certificate
active
06855952
ABSTRACT:
A semiconductor device wherein a resin containing as a cross-linking component a compound having a plurality of styrene group and represented by chemical formula [1] is used as an insulating material:where R is a hydrocarbon structure which may have a substituent group or groups, R1is hydrogen, methyl, or ethyl, m is and integer of 1 to 4, and n is an integer of not less than 2. With this, a semiconductor device and a semiconductor package which show excellent transmission characteristics and less power consumption are provided.
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Prior U.S. Appl. No. 09/951,414, filed Sep. 14, 2001 (Title of the invention: Low Dielectric Loss Tangent Resin Composition, Curable Film and Cured Product, Electrical Part Using the Same and Method for Production Thereof.
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High-Yield Synthesis and Characterization of 1,2-Bis(p-vinylphenyl) Ethane, Li et al., J. Polym.Sci.Part A: Polym.Chem.32,2023-2027(1994).
“Cyclopolymerization of _-BIS (4-Vinylphenyl)-Alkane: Polymer Containing [3.3] Paracyclophane Unit in the Main Chain” Polymer Letters Edition, vol. 14, pp. 85-90 (1976).
Amou Satoru
Ishikawa Takao
Nagai Akira
Nakano Hiroshi
Yamada Shinji
Antonelli Terry Stout & Kraus LLP
Hitachi , Ltd.
Jones Deborah
Xu Ling
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