Semiconductor device and semiconductor module employing thereof

Details Semiconductor device and semiconductor module employing thereof Semiconductor device and semiconductor module employing thereof

2011-03-01

2011-03-01

Warren, Matthew E (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Multiple housings

C257S678000, C257S685000, C257S690000, C257S698000, C257S734000, C257S773000, C257S774000, C257SE23011, C257SE23145, C257SE23151, C257SE23174, C257SE23175, C438S667000

Reexamination Certificate

active

07898073

ABSTRACT:
A semiconductor device is provided with a silicon substrate and a structure filled in a through hole that has a rectangular cross section and extends through the silicon substrate. The structure comprises a pipe-shaped through electrode, stripe-shaped through electrodes, silicons, a first insulating film, a second insulating film and a third insulating film. The pipe-shaped through electrode is utilized as a pipe-shaped electric conductor that extends through the silicon substrate. In addition, the stripe-shaped through electrodes are provided in the interior of the pipe-shaped through electrode so that the stripe-shaped through electrodes extend through the silicon substrate and is spaced away from the pipe-shaped through electrode. A plurality of through electrodes are provided in substantially parallel within the inner region of the pipe-shaped through electrode.

REFERENCES:
patent: 6052287 (2000-04-01), Palmer et al.
patent: 6531945 (2003-03-01), Ahn et al.
patent: 6579738 (2003-06-01), Farrar et al.
patent: 1998-223833 (1998-08-01), None
patent: 2002-043502 (2002-02-01), None
patent: 2002-170904 (2002-06-01), None
patent: 2002-289623 (2002-10-01), None
patent: 2003-151978 (2003-05-01), None
patent: 2005-285972 (2005-10-01), None

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