Semiconductor device and semiconductor memory device

Details Semiconductor device and semiconductor memory device Semiconductor device and semiconductor memory device

1991-08-05

1992-05-19

James, Andrew J.

357 56, 357 49, H01L 2978, H01L 2906

Patent

active

051152894

ABSTRACT:
A semiconductor device, such as an FET or a charge coupled device, is provided having a channel or a charge coupled portion formed in a thin semiconductor layer which is substantially perpendicular to the substrate. Necessary electrodes, such as the gate electrode, and necessary insulating layers can be added at the thin semiconductor layer, and can maintain the necessary amount of electric current by securing the height of the semiconductor layer. The structure has the advantage that it can have its plane size reduced. Further, the semiconductor memory device using the above semiconductor device is suitable to high integration and has excellent electric characteristics.

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Drangeid, "High Speed Field Effect Structure", IBM Tech., vol. 11, #3, Aug. 1968, pp. 332-333.

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