Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2006-04-27
2008-12-30
Menz, Douglas M (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S628000
Reexamination Certificate
active
07470973
ABSTRACT:
In each of a p-channel MOS transistor and an n-channel MOS transistor, a channel direction is set in the <100> direction and a first stressor film accumulating therein a tensile stress is formed in a STI device isolation structure. Further, a second stressor film accumulating therein a tensile stress is formed on a silicon substrate so as to cover the device isolation structure.
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Fujitsu Limited
Menz Douglas M
Westerman, Hattori, Daniels & Adrian , LLP.
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