Semiconductor device and semiconductor integrated circuit...

Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S628000

Reexamination Certificate

active

07470973

ABSTRACT:
In each of a p-channel MOS transistor and an n-channel MOS transistor, a channel direction is set in the <100> direction and a first stressor film accumulating therein a tensile stress is formed in a STI device isolation structure. Further, a second stressor film accumulating therein a tensile stress is formed on a silicon substrate so as to cover the device isolation structure.

REFERENCES:
patent: 6656853 (2003-12-01), Shinya
patent: 6882025 (2005-04-01), Yeo et al.
patent: 6982465 (2006-01-01), Yukihiro et al.
patent: 7193269 (2007-03-01), Toda et al.
patent: 2002/0063292 (2002-05-01), Armstrong et al.
patent: 2002/0081794 (2002-06-01), Ito
patent: 2003/0181005 (2003-09-01), Hachimine et al.
patent: 58-162027 (1983-09-01), None
patent: 64-48462 (1989-02-01), None
patent: 2002-198368 (2002-07-01), None
patent: 2003-86708 (2003-03-01), None
patent: 2003-179157 (2003-06-01), None
patent: 2003-197906 (2003-07-01), None
patent: 2003-273206 (2003-09-01), None
patent: WO 03/050871 (2003-06-01), None
Shinya Ito et al., “Mechanical Stress Effect of Etch-Stop Nitride and its Impact on Deep Submicron Transistor Design”, IDEM 2000, Technical Digest, pp. 247-250.
Hirokazu Sayama et al., “Effect of <100> channel direction for high-performance short-channel-effect immune MOSFET”, Oyo Buturi, vol. 69, No. 9, pp. 1099-1102 (2000).
International Search Report of International Application PCT/JP2003/016782 mailed Mar. 9, 2004.
Japanese Office Action dated Sep. 16, 2008, issued in corresponding Japanese Application No. 2005-512797.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and semiconductor integrated circuit... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and semiconductor integrated circuit..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and semiconductor integrated circuit... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4039862

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.