Semiconductor device and semiconductor integrated circuit...

Details Semiconductor device and semiconductor integrated circuit... Semiconductor device and semiconductor integrated circuit...

2011-05-24

2011-05-24

Pham, Hoai v (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

Lateral bipolar transistor structure

C257S575000, C257SE27032

Reexamination Certificate

active

07948058

ABSTRACT:
A lateral IGBT structure having an emitter terminal including two or more base layers of a second conductivity-type for one collector terminal, in which the base layers of a second conductivity-type in emitter regions are covered with a first conductivity-type layer having a concentration higher than that of a drift layer so that a silicon layer between the first conductivity-type layer covering the emitter regions and a buried oxide film has a reduced resistance to increase current flowing to an emitter farther from the collector to thereby enhance the current density.

REFERENCES:
patent: 2004/0262696 (2004-12-01), Ronsisvalle
patent: 09-121046 (1997-05-01), None

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