Semiconductor device and semiconductor device manufacturing...

Semiconductor device manufacturing: process – Making passive device – Trench capacitor

Reexamination Certificate

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C438S243000, C438S622000, C257SE21008, C257SE21648

Reexamination Certificate

active

08008159

ABSTRACT:
A semiconductor device includes: a first interlayer insulating film; a first conductive member provided lower than the first interlayer insulating film; a contact plug that penetrates through the first interlayer insulating film, and is electrically connected to the first conductive member, the contact plug including a small-diameter part, and a large-diameter part arranged on the small-diameter part, an outer diameter of the large-diameter part being larger than an outer diameter of the small-diameter part, and the outer diameter of the large-diameter part being larger than an outer diameter of a connection face between the second conductive member and the large-diameter part; and a second conductive member that is provided on the first interlayer insulating film, and is electrically connected to the contact plug.

REFERENCES:
patent: 6395632 (2002-05-01), Farrar
patent: 6589711 (2003-07-01), Subramanian et al.
patent: 6869872 (2005-03-01), Suh
patent: 2001/0018273 (2001-08-01), Park et al.
patent: 2001/0023990 (2001-09-01), Yokoyama et al.
patent: 10-294441 (1998-11-01), None
patent: 2002-083881 (2002-03-01), None
patent: 2003-282734 (2003-10-01), None
patent: 2004-207681 (2004-07-01), None
patent: 2005-167188 (2005-06-01), None

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